TPS22916BYFPR Product Information

Product Overview

The TPS22916BYFPR is a 1-V to 5.5-V, 2-A, 60-mΩ ultra-low leakage load switch designed for applications requiring minimal power loss and efficient power management. Manufactured by Texas Instruments, this device features a low ON-resistance P-Channel MOSFET and advanced gate control design, making it suitable for a wide range of portable and wearable devices.

Features

• Input Operating Voltage Range (VIN): 1 V to 5.5 V
• Maximum Continuous Current (IMAX): 2 A
• ON-Resistance (RON):60 mΩ (typ.) at 5 V100 mΩ (typ.) at 1.8 V200 mΩ (typ.) at 1 V
• Ultra-low Power Consumption:ON state (IQ): 0.5 μA (typ.), 1 μA (max.)OFF state (ISD): 10 nA (typ.), 100 nA (max.)
• Smart ON Pin Pulldown (RPD):ON ≥ VIH (ION): 10 nA (max.)ON ≤ VIL (RPD): 750 kΩ (typ.)
• Slow Timing in C Version Limits Inrush Current:5-V turn-on time (tON): 1400 μs at 5 mV/μs1.8-V turn-on time (tON): 3000 μs at 1 mV/μs1-V turn-on time (tON): 6500 μs at 0.3 mV/μs
• Fast Timing in B Version Reduces Wait Time:5-V turn-on time (tON): 115 μs at 57 mV/μs1.8-V turn-on time (tON): 250 μs at 12 mV/μs1-V turn-on time (tON): 510 μs at 3.3 mV/μs
• Always-ON True Reverse Current Blocking (RCB):Activation current (IRCB): –500 mA (typ.)Reverse leakage (IIN, RCB): –300 nA (max.)
• Quick Output Discharge (QOD): 150 Ω (typ.) (N version has no QOD)
• Active Low Enable Option (L versions)

Applications

• Wearables
• Smartphones
• Tablets
• Portable speakers

Pin Configuration

Pin Functions

TableCopy

Ordering Information

• Part Number: TPS22916BYFPR
• Package Type: DSBGA (YFP)
• Package Drawing: YFP
• Pins: 4
• SPQ (Standard Pack Quantity): 3000
• Reel Diameter: 180.0 mm
• Reel Width: 8.4 mm
• A0: 0.86 mm
• B0: 0.86 mm
• K0: 0.59 mm
• P1: 4.0 mm
• W: 8.0 mm
• Pin1 Quadrant: Q1

Absolute Maximum Ratings

• Input Voltage (VIN): –0.3 V to 6 V
• Output Voltage (VOUT): –0.3 V to 6 V
• Enable Voltage (VON): –0.3 V to 6 V
• Maximum Continuous Switch Current (IMAX): 2 A
• Maximum Pulsed Switch Current (IPLS): 2.5 A (pulse < 300-µs, 2% duty cycle)
• Maximum Junction Temperature (TJ,MAX): 125 °C
• Storage Temperature (TSTG): –65 °C to 150 °C
• Maximum Lead Temperature (TLEAD): 300 °C (10-s soldering time)

ESD Ratings

• Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001: ±2000 V
• Charged-device model (CDM), per JEDEC specification JESD22-C101: ±500 V

Recommended Operating Conditions

• Input Voltage (VIN): 1 V to 5.5 V
• Output Voltage (VOUT): 0 V to 5.5 V
• High-level Input Voltage (VIH): 1 V to 5.5 V
• Low-level Input Voltage (VIL): 0 V to 0.35 V
• Operating Free-Air Temperature (TA): –40 °C to 85 °C

Thermal Information

• Junction-to-Ambient Thermal Resistance (θJA): 193 °C/W
• Junction-to-Case (Top) Thermal Resistance (θJCtop): 2.3 °C/W
• Junction-to-Board Thermal Resistance (θJB): 36 °C/W
• Junction-to-Top Characterization Parameter (ψJT): 12 °C/W
• Junction-to-Board Characterization Parameter (ψJB): 36 °C/W

Electrical Characteristics

Input Supply (VIN)

• Quiescent Current (I Q, VIN IN): 0.5 μA (typ.), 1 μA (max.) at 25 °C
• Shutdown Current (I SD, VIN IN): 10 nA (typ.), 100 nA (max.) at 25 °C

ON-Resistance (RON)

• VIN = 5 V: 60 mΩ (typ.), 80 mΩ (max.) at 25 °C
• VIN = 3.6 V: 70 mΩ (typ.), 90 mΩ (max.) at 25 °C
• VIN = 1.8 V: 100 mΩ (typ.), 125 mΩ (max.) at 25 °C
• VIN = 1.2 V: 150 mΩ (typ.), 200 mΩ (max.) at 25 °C
• VIN = 1 V: 200 mΩ (typ.), 275 mΩ (max.) at 25 °C

Enable Pin (ON)

• ON Pin Leakage Current (I ON): 10 nA (max.) at 25 °C
• Smart Pulldown Resistance (RPD): 750 kΩ (typ.) at 25 °C

Reverse Current Blocking (RCB)

• RCB Activation Current (IRCB): –500 mA (typ.) at 25 °C
• RCB Activation Time (t RCB): 10 μs (typ.) at 25 °C
• RCB Release Voltage (V RCB): 25 mV (typ.) at 25 °C
• Reverse Leakage Current (I IN, RCB): –300 nA (max.) at 25 °C

Quick Output Discharge (QOD)

• QOD Output Discharge Resistance: 150 Ω (typ.) at 25 °C

Switching Characteristics

Fast Timing (TPS22916B)

• Turn-On Time (tON):5 V: 115 μs at 57 mV/μs3.6 V: 140 μs at 12 mV/μs1.8 V: 250 μs at 12 mV/μs1.2 V: 350 μs at 3.3 mV/μs1 V: 510 μs at 3.3 mV/μs
• Rise Time (tRISE):5 V: 70 μs3.6 V: 80 μs1.8 V: 130 μs1.2 V: 190 μs