Nexperia USA Inc. BC857W,115

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Specifications
Type
Paramete
Type
Paramete
Grade
-
Mounting Type
Surface Mount
Qualification
-
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Transistor Type
PNP
Operating Temperature
150°C (TJ)
Supplier Device Package
SOT-323
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA, 5V
Current - Collector (Ic) (Max)
100 mA
Frequency - Transition
100MHz
Package / Case
SC-70, SOT-323
Power - Max
200 mW
Overview

BC857W Datasheet Summary

General Information

  • Part Number: BC857W
  • Manufacturer: Nexperia
  • Series: 65 V, 100 mA PNP General-Purpose Transistors
  • Package Type: SOT323 (SC-70)
  • Marking Code: Refer to datasheet for specific marking codes
  • Shipping: Taped and reeled, 3000 per 7" reel

Features

  • Low Current: Maximum 100 mA
  • Low Voltage: Maximum 65 V
  • General-Purpose: Suitable for switching and amplification
  • Compliance: RoHS compliant, REACH compliant, Conflict Minerals compliant

Applications

  • General-Purpose Switching and Amplification: Suitable for a variety of analog and digital applications

Electrical Characteristics (TA = 25°C unless otherwise specified)

  • Collector-Emitter Voltage (VCEO): -45 V
  • Collector-Base Voltage (VCBO): -50 V
  • Emitter-Base Voltage (VEBO): -5.0 V
  • Collector Current (Continuous, DC): -100 mA
  • Peak Collector Current (ICM): -200 mA
  • Peak Base Current (IBM): -200 mA
  • DC Current Gain (hFE)VCE = -5 V, IC = -2 mA: 420 to 800
  • Collector-Emitter Saturation Voltage (VCE(sat))IC = -10 mA, IB = -0.5 mA: -75 to -300 mVIC = -100 mA, IB = -5 mA: -250 to -600 mV
  • Base-Emitter Saturation Voltage (VBE(sat))IC = -10 mA, IB = -0.5 mA: -700 mVIC = -100 mA, IB = -5 mA: -850 mV
  • Base-Emitter Voltage (VBE)VCE = -5 V, IC = -2 mA: -600 to -650 mVVCE = -5 V, IC = -10 mA: -750 to -820 mV
  • Collector-Base Cutoff Current (ICBO)VCB = -30 V, IE = 0 A: -1 to -15 nAVCB = -30 V, IE = 0 A, Tj = 150°C: -4 µA
  • Emitter-Base Cutoff Current (IEBO)VEB = -5 V, IC = 0 A: -100 nA
  • Gain-Bandwidth Product (fT): 100 MHz
  • Collector Capacitance (Cc)VCB = -10 V, IE = 0 A, f = 1 MHz: 3 pF
  • Emitter Capacitance (Ce)VEB = -5 V, IC = 0 A, f = 1 MHz: 12 pF
  • Noise Figure (NF)IC = -200 µA, VCE = -5 V, RS = 2 kΩ, f = 1 kHz, Δf = 200 Hz: 2 to 10 dB

Thermal Characteristics

  • Thermal Resistance (Rth(j-a))Free Air: 625 K/W
  • Transient Thermal Impedance (Zth(j-a)): Refer to datasheet for typical values

Mechanical Data

  • Package Outline: SOT323 (SC-70)
  • Dimensions: Refer to datasheet for detailed dimensions
  • Weight: Approximately 0.01 g
  • Case Material: UL 94V-0
  • Solder & Assembly Conditions: 260°C/10s

Ordering Information

  • Package Type: SOT323 (SC-70)
  • Marking Code: Refer to datasheet for specific marking codes
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