BSS87 Product Summary

Basic Information

• Part Number: BSS87
• Package Type: SOT89 (SC-62)
• Shipping Quantity: Not specified in the provided document

General Description

The BSS87 is an N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) designed for medium power applications. It is housed in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. This transistor is suitable for automotive, industrial, computing, consumer, and wearable application markets.

Features and Benefits

• Direct Interface: Compatible with Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.
• Fast Switching: Very fast switching capabilities.
• No Secondary Breakdown: Enhanced reliability and performance.

Applications

• Relay Driver: Suitable for driving relays.
• High-Speed Line Driver: Ideal for high-speed line driving applications.
• Load-Side Loadswitch: Effective as a load-side load switch.
• Switching Circuits: General-purpose switching applications.

Quick Reference Data

• Drain-Source Voltage (VDS): 200 V
• Gate-Source Voltage (VGS): ±20 V (T = 25 °C)
• Drain Current (ID):Continuous: 0.4 A (VGS = 10 V, Tamb = 25 °C)Pulsed: 0.7 A (VGS = 10 V, Tamb = 25 °C, t ≤ 5 s)
• On-State Resistance (RDS(on)):1.6 to 3 Ω (VGS = 10 V, ID = 0.4 A, T = 25 °C)3.7 to 7 Ω (VGS = 10 V, ID = 0.4 A, T = 150 °C)

Pinning Information

• Pin 1 (S): Source
• Pin 2 (D): Drain
• Pin 3 (G): Gate

Ordering Information

• Package Type: SOT89 plastic surface-mounted package with die pad for good heat transfer; 3 leads.

Marking

• Marking Code: KA

Limiting Values

• Drain-Source Voltage (VDS): 200 V
• Gate-Source Voltage (VGS): ±20 V (T = 25 °C)
• Drain Current (ID):Continuous: 0.4 A (VGS = 10 V, Tamb = 25 °C)Pulsed: 1.6 A (Tamb = 25 °C, single pulse, tp ≤ 10 µs)
• Total Power Dissipation (Ptot):0.58 W (Tamb = 25 °C)1 W (Tsp = 25 °C)12.5 W (T = 25 °C)
• Junction Temperature (Tj): -55 to 150 °C
• Ambient Temperature (Tamb): -55 to 150 °C
• Storage Temperature (Tstg): -65 to 150 °C
• Source Current (IS): 0.4 A (Tamb = 25 °C)

Thermal Characteristics

• Thermal Resistance (Rth(j-a)):190 to 216 K/W (in free air)105 to 125 K/W (mounted on FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm²)
• Thermal Resistance (Rth(j-sp)): 6 to 10 K/W
• Transient Thermal Impedance (Zth(j-a)): See Figures 4 and 5 for typical values.

Characteristics

• Static Characteristics:Drain-Source Breakdown Voltage (V(BR)DSS): 200 V (ID = 250 µA, VGS = 0 V, Tj = 25 °C)Gate-Source Threshold Voltage (VGSth): 0.8 to 2.8 V (ID = 1 mA, VDS = VGS, T = 25 °C)Drain Leakage Current (IDSS): 200 nA (VDS = 60 V, VGS = 0 V, Tj = 25 °C)Gate Leakage Current (IGSS): ±100 nA (VGS = ±20 V, VDS = 0 V, Tj = 25 °C)On-State Resistance (RDS(on)):1.6 to 3 Ω (VGS = 10 V, ID = 0.4 A, T = 25 °C)3.7 to 7 Ω (VGS = 10 V, ID = 0.4 A, T = 150 °C)Forward Transconductance (gfs): 0.8 S (VDS = 25 V, ID = 0.4 A, Tj = 25 °C)
• Dynamic Characteristics:Total Gate Charge (QG(tot)): 5.5 to 10 nCGate-Source Charge (QGS): 0.3 nCGate-Drain Charge (QGD): 1.4 nC (VDS = 50 V, ID = 0.25 A, VGS = 10 V, T = 25 °C)Input Capacitance (Ciss): 100 to 120 pFOutput Capacitance (Coss): 20 to 30 pFReverse Transfer Capacitance (Crss): 10 to 15 pF (VDS = 25 V, f = 1 MHz, VGS = 0 V, T = 25 °C)Turn-On Delay Time (td(on)): 2.7 to 6 nsRise Time (tr): 3.7 to 6 nsTurn-Off Delay Time (td(off)): 16.4 to 30 nsFall Time (tf): 7.5 to 20 ns (VDS = 50 V, ID = 0.25 A, VGS = 10 V, RG(ext) = 6 Ω, Tj = 25 °C)
• Source-Drain Diode:Source-Drain Voltage (VSD): 0.8 to 1.2 V (IS = 0.4 A, VGS = 0 V, Tj = 25 °C)

Package Outline

• Package Type: SOT89 (SC-62)
• Dimensions: See Figure 18 for detailed dimensions.

Soldering Information

• Reflow Soldering Footprint: See Figure 19 for dimensions.
• Wave Soldering Footprint: See Figure 20 for dimensions.

Revision History

• BSS87 v.5 (2014-12-09): Corrections to Figure 3.
• BSS87 v.4 (2014-08-15): No specific changes mentioned.
• BSS87 v.3 (2001-05-18): No specific changes mentioned.
• BSS87 v.2 (1997-06-23): Initial release.