Name: BC847C
Brand: Diotec Semiconductor
SKU: JM-BC847C
Availability: InStock

Diotec Semiconductor BC847C

View All Single, Pre-Biased Bipolar Transistors by Diotec Semiconductor

Part Number:
BC847C
Manufacturer:
Diotec Semiconductor
Category:
Single, Pre-Biased Bipolar Transistors
RoHs:
Non-RoHS Compliant
Datasheet:
BC847C_Datesheet
Description:
TRANS NPN 45V 0.1A SOT23-3
In stock 2,966

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Specifications

Type

Paramete

Type

Paramete

Voltage - Collector Emitter Breakdown (Max)

45 V

Operating Temperature

-55°C ~ 150°C (TJ)

Supplier Device Package

SOT-23-3 (TO-236)

Current - Collector Cutoff (Max)

15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

420 @ 2mA, 5V

Frequency - Transition

300MHz

Mounting Type

Surface Mount

Power - Max

250 mW

Qualification

Current - Collector (Ic) (Max)

100 mA

Vce Saturation (Max) @ Ib, Ic

600mV @ 5mA, 100mA

Package / Case

TO-236-3, SC-59, SOT-23-3

Grade

Transistor Type

NPN

Overview

BC847C Datasheet Summary

Model Information

Model Number: BC847C
Type: SMD General Purpose NPN Transistor
Package: SOT-23
Electrical Characteristics
Collector Current (DC): IC=100 mA
Peak Collector Current: ICM=200 mA
Collector-Emitter Voltage: VCEO=45 V
Collector-Base Voltage: VCBO=50 V
Emitter-Base Voltage: VEBO=5 V
Power Dissipation: Ptot=250 mW (Industrial/AEC-Q101 grade), Ptot=200 mW (Commercial grade)
DC Current Gain (hFE):Group A: hFE=110 to 200Group B: hFE=180 to 290Group C: hFE=220 to 450
Collector-Emitter Saturation Voltage (VCEsat):VCE=5 V,IC=10 mA,IB=0.5 mA: VCEsat≤90 mVVCE=5 V,IC=100 mA,IB=5 mA: VCEsat≤250 mV
Base-Emitter Saturation Voltage (VBEsat):VCE=5 V,IC=10 mA,IB=0.5 mA: VBEsat≤700 mVVCE=5 V,IC=100 mA,IB=5 mA: VBEsat≤900 mV
Base-Emitter Voltage (VBE):VCE=5 V,IC=2 mA: VBE=580 mVVCE=5 V,IC=10 mA: VBE=660 mV
Collector-Base Cutoff Current (ICBO):VCB=50 V,(E open): ICBO≤0.1μA
Emitter-Base Cutoff Current (IEBO):VEB=5 V,(C open): IEBO≤100 nA
Gain-Bandwidth Product (fT):Commercial grade (-C): fT=100 MHzIndustrial/AEC-Q101 grade (-Q/-AQ): fT=300 MHz
Collector-Base Capacitance (CCBO):VCB=10 V,IE=0,f=1 MHz: CCBO≤3.5 pF
Emitter-Base Capacitance (CEBO):VEB=0.5 V,IC=0,f=1 MHz: CEBO≤9 pF
Thermal Resistance (RthA):Commercial grade (-C): RthA<625 K/WIndustrial/AEC-Q101 grade (-Q/-AQ): RthA<420 K/W
Temperature Ranges
Junction Temperature (Tj): -55°C to +150°C
Storage Temperature (TS): -55°C to +150°C
Mechanical Data
Package Type: SOT-23
Weight: Approximately 0.01 g
Case Material: UL 94V-0
Soldering and Assembly Conditions: 260°C for 10 seconds
Moisture Sensitivity Level (MSL): 1
Applications
Typical Applications: Signal processing, Switching, Amplification
Compliance
RoHS Compliance: Yes
REACH Compliance: Yes
Conflict Minerals Compliance: Yes
Notes
Complementary PNP Transistor: BC847C/-C/-Q/-AQ = 1F
Bonding Wires: Au bond wires (for all grades)
Grade -C: Commercial grade
Grade -Q/-AQ: AEC-Q101 compliant/qualified

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